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MCC 220 MCD 220
Thyristor Modules Thyristor/Diode Modules
ITRMS = 2x400 A ITAVM = 2x250 A VRRM = 800-1800 V
3 2 76 1 5 4
VRSM VDSM V 900 1300 1500 1700 1900
VRRM VDRM V 800 1200 1400 1600 1800
Type Version 1 MCC MCC MCC MCC MCC 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1 Version 1 MCD MCD MCD MCD MCD 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1
Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 400 250 8500 9000 7000 7600 360000 336000 245000 240000 100 A A A A A A A2s A2s A2s A2s A/s Features MCC
3
671
542
3
1
5 42
i2dt
MCD
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
(di/dt)cr
TVJ = TVJM; repetitive, IT = 750 A f = 50 Hz; tP = 200 s VD = 2/3 VDRM IG = 1 A diG/dt = 1 A/s non repetitive, IT = 250 A
800 1000 120 60 20 10 -40...+140 140 -40...+125
A/s V/s W W W V C C C V~ V~
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 s tP = 500 s
* International standard package * Direct copper bonded Al2O3 -ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins Applications * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches Advantages * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
50/60 Hz, RMS; IISOL 1 mA;
t = 1 min t=1s
3000 3600
Mounting torque (M5) Terminal connection torque (M8) Typical including screws
2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
(c) 2004 IXYS All rights reserved
1-4
419
MCC 220 MCD 220
Symbol IRRM IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT /IF = 600 A; TVJ = 25C For power-loss calculations only (TVJ = 140C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C Characteristic Values 70 40 1.53 0.9 1.0 2 3 150 200 0.25 10 200 150 2 typ. 200 760 275 0.139 0.0695 0.179 0.0895 12.7 9.6 50 mA mA V V m V V mA mA V mA mA mA s s C A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics
VD = 2/3 VDRM
TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG /dt = 1 A/s TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module
other values see Fig. 8/9
Creepage distance on surface Strike distance through air Maximum allowable acceleration
Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass
20
12
14
2-4
(c) 2004 IXYS All rights reserved
419
MCC 220 MCD 220
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 4 i2dt versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
(c) 2004 IXYS All rights reserved
3-4
419
MCC 220 MCD 220
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
0.15 K/W 30 DC
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d RthJC (K/W) 0.139 0.141 0.142 0.142 0.143
ZthJC
0.10
DC 180C 120C 60C 30C
0.05
Constants for ZthJC calculation: i
0 0.00 10-3
Rthi (K/W) 0.0037 0.0177 0.1175
ti (s) 0.0099 0.168 0.456
10-2
10-1
100
101
s
102
1 2 3
t
0.20 K/W 30 DC
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d:
ZthJK
0.15
d DC 180C 120C 60C 30C
RthJK (K/W) 0.179 0.181 0.182 0.183 0.183
0.10
0.05
Constants for ZthJK calculation: i Rthi (K/W) 0.0037 0.0177 0.1175 0.04 ti (s) 0.0099 0.168 0.456 1.36
419
0 0.00 10-3
10-2
10-1
100
101
s
102
t
1 2 3 4
4-4
(c) 2004 IXYS All rights reserved

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